EBAC/RCI电子束吸收电流分析系统，能够方便快速的定位半导体芯片电路中的短路及失效点位置，不但可以对同层电路，而且可以对次表层，甚至表层下第三层、第四层电路进行失效点的精准定位，因此能够对半导体芯片电路或相关材料进行快速准确的失效分析。

目前，集成电路芯片设计越来越复杂，关键尺寸和金属连线线宽越来越小，传统的失效点定位方法，如微光显微镜或光束又到电阻变化鞥，由于其分辨率不足，导致不能精确地定位电路故障点位置，电压衬度方法虽然在一些开路短路失效分析中能快速地定位失效点，但只是局限于电路同层分析。

EBAC/RCI电子束吸收电流分析系统是基于扫描电镜的分析系统，在保留扫描电镜高分辨率的前提下，能够对同层芯片电路进行高精准定位，同时能够对次表层甚至表面下第三、第四层电路进行失效点定位，因此越来越多的应用于先进制程芯片的失效分析。在涉及多层金属层的失效定位分析时，EBAC/RCI方法更加简便精确，可保证分析的成功率，并缩短分析周期。

EBAC/RCI acquisition

The lowest noise Electron Beam Absorbed Current (EBAC)

and Resistive Contrast Imaging (RCI)

Find exact location of any open,resistive or shorting defect

• Localize metal line cuts caused by cracking,corrosion, electro-migration, or foreign particles
• Identify resistive opens caused by interface contamination at via interconnects
• Pinpoint location for direct TEM lamella FIB preparation

Characterize interconnects with highest resolution

• Reveal electrical integrity of nets with sub-mciron lateral resolution and bridge from EFA to PFA
• Diagnose fabrication and long term issues, including contamination,metal pattering defects, resistive interconnectors, or electro-migration
• Directly isolate defects to the exact layer and die location, and improve them to product improvement actions

Verify device operation modes with built-in biasing for voltage contrast

• Image bias/voltage contrast in delayered devices
• Monitor operation of devices under bias
• Compare imaged behaviour with device design

Localize defects in thin dielectric layers

• Visualise and localise weaknesses in gate oxide (GOX) and capacitor oxide (COX) before breakdown
• Pinpoint oxides shorts caused by ESD or EOS with sub-micron resolution
• Preserve the original defect signature with power dissipation in the lower nW range during localization

Access failures invisible in voltage contrast

• Find low resistances that allow charge tunneling trough the interconnects
• Investigate structures in contact with the silicon substrate
• Characterize large metal structures